CMUTs with high-K atomic layer deposition dielectric material insulation layer

Atomic-Layer-Deposited High-k Dielectric Integration on Epitaxial Graphene

The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new channel materials such as Ge, III-V semiconductors, carbon nanotubes (CNTs) and graphene. Perfect top-gate dielectric stacks are needed in order to sustain their potential device performance for carbon nanoelectronics. Due to the inert nature of carbon surfaces of CNTs and graphene...

Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

Articles you may be interested in O 3-based atomic layer deposition of hexagonal La 2 O 3 films on Si(100) and Ge(100) substrates Atomic layer deposition of La x Zr 1 − x O 2 − δ (x = 0.25) high-k dielectrics for advanced gate stacks Appl. Suppressed growth of unstable low-k Ge O x interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor Appl....

Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone

We present an Al2O3 dielectric layer on molybdenum disulfide (MoS2), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al2O3 layers, in contrast to the incomplete coverage we ob...

The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

Atomic Layer Deposition of High-k Oxides on Graphene

Graphene that is a single hexagonal layer of carbon atoms with very high intrinsic charge carrier mobility (more than 200 000 cm2/Vs at 4.2 K for suspended samples; Bolotin, et al., 2008) attracts attention as a promising material for future nanoelectronics. During last few years, significant advancement has been made in preparation of large-area graphene. The lateral sizes of substrates for gr...